Abstract
A method of processing a monocrystalline semiconductor work piece includes: applying pulses of laser light to a first main surface of the monocrystalline semiconductor work piece, the pulses of laser light penetrating the first main surface and forming modified regions in a separation zone within the monocrystalline semiconductor work piece, each modified region being delimited by a subcritical crack that surrounds an inner part in which the monocrystallinity of the semiconductor work piece is altered; controlling the pulses of laser light such that the subcritical cracks of adjacent ones of the modified regions are non-overlapping for at least half of the modified regions formed in the monocrystalline semiconductor work piece; and after inducing the subcritical cracks, forming at least one crack that connects the subcritical cracks. Additional work piece splitting techniques and techniques for compensating work piece deformation that occurs during the splitting process are also described.