Abstract
A temperature-sensitive transistor-actuator device and a method for manufacturing the same are disclosed. The temperature-sensitive transistor-actuator device comprises a semiconductor layer; a block copolymer layer formed on the semiconductor layer and having a lamella structure; an ion gel layer formed on the block copolymer layer; a source electrode contacting the semiconductor layer; a drain electrode spaced apart from the source electrode and contacting the semiconductor layer; and a gate electrode spaced apart from the source electrode and the drain electrode, applying a voltage to the semiconductor layer; a transistor part; a converter part electrically connected to the source electrode or the drain electrode; and an actuator part electrically connected to the converter part, having a bilayer structure of materials with differing degrees of contraction according to moisture content.